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Vertical Cavity Surface Emitting Laser sources for gas detection
Author(s) -
Cerutti L.,
Garnache A.,
Ouvrard A.,
Garcia M.,
Genty F.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200460453
Subject(s) - stack (abstract data type) , laser , diffraction , molecular beam epitaxy , continuous wave , materials science , optics , quantum well , optoelectronics , full width at half maximum , transverse mode , transverse plane , beam (structure) , epitaxy , photoluminescence , vertical cavity surface emitting laser , resolution (logic) , layer (electronics) , physics , nanotechnology , structural engineering , engineering , artificial intelligence , computer science , programming language
The molecular beam epitaxy growth conditions of a GaInAsSb/AlGaAsSb multi‐quantum wells stack have been successfully optimised. This included minimising the full‐width at half‐maximum of the high resolution X‐ray diffraction satellites and maximising the photoluminescence peak intensity collected at room temperature. Then, the optimised gain structures were successfully inserted in a) a microcavity and b) an external‐cavity Vertical Cavity Surface Emitting Laser. In both cases, room temperature laser operation near 2.3 µm in the continuous wave regime, with a circular single transverse mode output beam, was demonstrated. An output power larger than 1 mW at room temperature was measured. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)