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Free energy and capture cross section of the E2 trap in n‐type GaN
Author(s) -
Pernot J.,
Ulzhöfer C.,
Muret P.,
Beaumont B.,
Gibart P.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200460438
Subject(s) - trap (plumbing) , atomic physics , materials science , band gap , deep level transient spectroscopy , range (aeronautics) , cross section (physics) , spectroscopy , space charge , optoelectronics , physics , electron , nuclear physics , silicon , quantum mechanics , meteorology , composite material
Free energy and capture cross section of the E2 trap in n‐type GaN are investigated by deep level transient spectroscopy with the help of an experimental method, relying on space charge depth modulation [D. Pons, J. Appl. Phys. 55 , 3644 (1984)]. This technique is applied with a large range of filling pulse durations (up to 6 orders of magnitude) and for temperature varying between 260 K and 330 K. Entropy and capture barrier are found to be negligible. Analysis of our results makes N in Ga site (N Ga antisite) as the best candidate for this trap. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)