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Electron transport properties of AlGaAs/GaAs heterostructure containing a d‐doping in the quantum well
Author(s) -
Rekaya S.,
Bouzaïene L.,
Sfaxi L.,
Hjiri M.,
Contreras S.,
Robert J. L.,
Maaref H.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200460437
Subject(s) - heterojunction , electron density , doping , electron , condensed matter physics , electron mobility , fermi gas , quantum well , materials science , silicon , quantum hall effect , chemistry , physics , optoelectronics , optics , laser , quantum mechanics
Electronic properties of the Si δ‐doped AlGaAs/GaAs heterostructure such as the electron density and electron mobility have been studied when the Al concentration in the vicinity to the silicon ( x Al (Si)) is varied. Shubnikov–de Haas and quantum Hall effect measurements at 4.2 K have been carried out to investigate the existence of a quasi‐two‐dimensional electron gas (2DEG) in such structures. We have studied the effects of the Al concentration x Al (Si) on the electronic properties. Results show an improvement of the electron transport properties when x Al (Si) decreases. But as far as the electron mobility is concerned, a slight difference between the theoretical and experimental values was observed. The value of interface charge density ( N BI ) is necessary to explain the experimental mobility at low temperature. For N BI ≈ 6 × 10 9 cm –2 , we have obtained a good agreement between the theoretical and experimental electron mobility. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)