Electron transport properties of AlGaAs/GaAs heterostructure containing a d‐doping in the quantum well

Electronic properties of the Si δ‐doped AlGaAs/GaAs heterostructure such as the electron density and electron mobility have been studied when the Al concentration in the vicinity to the silicon ( x Al (Si)) is varied. Shubnikov–de Haas and quantum Hall effect measurements at 4.2 K have been carried out to investigate the existence of a quasi‐two‐dimensional electron gas (2DEG) in such structures. We have studied the effects of the Al concentration x Al (Si) on the electronic properties. Results show an improvement of the electron transport properties when x Al (Si) decreases. But as far as the electron mobility is concerned, a slight difference between the theoretical and experimental values was observed. The value of interface charge density ( N BI ) is necessary to explain the experimental mobility at low temperature. For N BI ≈ 6 × 10 9 cm –2 , we have obtained a good agreement between the theoretical and experimental electron mobility. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)