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Optical mapping of aluminum doped p‐type SiC wafers
Author(s) -
Wellmann P. J.,
Straubinger T.,
Künecke U.,
Müller R.,
Sakwe S. A.,
Pons M.,
Thuaire A.,
Crisci A.,
Mermoux M.,
Auvray L.,
Camassel J.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200460436
Subject(s) - materials science , doping , opacity , optoelectronics , wafer , raman spectroscopy , homogeneity (statistics) , aluminium , photoluminescence , birefringence , analytical chemistry (journal) , optics , computer science , chemistry , composite material , physics , chromatography , machine learning
We discuss the application of optical techniques to address the spatial distribution of electronic properties of highly aluminum doped p‐type SiC wafers; optical techniques are superior over their electrical counterparts in a sense that they are non‐destructive. While absorption and birefringence mapping are powerful tools to determine the homogeneity of charge carrier concentration and defects in n‐type SiC, respectively, the same methods fail in highly p‐type doped SiC due to the opaque nature of the latter. Therefore reflective methods like Raman spectroscopy and low temperature photoluminescence have to be applied in order to address electronic properties by optical techniques. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)