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Control of Al‐doping in 4H–SiC homo‐epitaxial layers grown with a HMDS/TMA/P mixture
Author(s) -
Sartel C.,
Soulière V.,
Zielinski M.,
Monteil Y.,
Camassel J.,
Smith L.,
Rushworth S.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200460419
Subject(s) - propane , aluminium , epitaxy , silane , doping , analytical chemistry (journal) , layer (electronics) , materials science , aluminium oxide , chemistry , chemical engineering , mineralogy , nanotechnology , metallurgy , composite material , optoelectronics , organic chemistry , engineering
We report on the growth of thin, aluminium doped, homo‐epitaxial layers of 4H–SiC using a threefold mixture of purified hexamethyldisilane (HMDS) admixted with propane (P) and trimethylaluminium (TMA). The growth has been performed in an AP‐CVD, cold wall, vertical reactor in which the growth of 4H–SiC layers using HMDS admixed with propane has been well demonstrated. To control, as a function of the growth parameters, the amount of aluminium incorporated in the epitaxial layers SIMS, C(V) and Raman experiments were done. They show that good quality p‐type epitaxial layers can be grown, up to a final aluminium concentration of about 2 × 10 19 at cm –3 . Comparing with the more standard gas system silane/TMA/P, we have found that there is no significant difference. The total amount of Al incorporated is about the same and, in both cases, the incorporation starts to be limited when the growth temperature reaches 1500 °C. In both cases, also, the C/Si ratio and the growth rate influence the aluminium concentration. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)