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Some benefits of Fe doped less dislocated GaN templates for AlGaN/GaN HEMTs grown by MOVPE
Author(s) -
Bougrioua Z.,
Azize M.,
Lorenzini P.,
Laügt M.,
Haas H.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200460417
Subject(s) - metalorganic vapour phase epitaxy , dislocation , materials science , sapphire , doping , optoelectronics , transistor , resistive touchscreen , epitaxy , layer (electronics) , nanotechnology , electrical engineering , composite material , physics , voltage , optics , laser , engineering
Strategies for maintaining a low threading dislocation density in highly resistive GaN layers grown by MOVPE on sapphire or SiC substrates using Fe modulation doping are presented. Sheet resistances as high as 10 8 Ω □ for dislocation densities lower than 8 × 10 8 cm –2 have been obtained. 2DEGs created at the AlGaN/GaN:Fe interface have good confinement while the low dislocation density benefits the mobility: room temperature values up to 2170 cm 2 V –1 s –1 have been obtained for a carrier density of 9.3 × 10 12 cm –2 . A simplified transport model is proposed to fit the experimental data. Processed transistors showed good channel control and DC performance. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)