Premium
Optical properties of InN with stoichoimetry violation and indium clustering
Author(s) -
Shubina T. V.,
Ivanov S. V.,
Jmerik V. N.,
Glazov M. M.,
Kalvarskii A. P.,
Tkachman M. G.,
Vasson A.,
Leymarie J.,
Kavokin A.,
Amano H.,
Akasaki I.,
Butcher K. S. A.,
Guo Q.,
Monemar B.,
Kop'ev P. S.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200460321
Subject(s) - indium , absorption edge , absorption (acoustics) , atom (system on chip) , range (aeronautics) , band gap , chemistry , enhanced data rates for gsm evolution , atomic physics , binding energy , nitrogen atom , physics , materials science , molecular physics , condensed matter physics , optics , optoelectronics , quantum mechanics , telecommunications , computer science , composite material , group (periodic table) , embedded system
We demonstrate that nonstoichiometry is one of the main reason of strong deviation of the InN optical gap in the 0.7–2 eV range, with N/In < 1 and N/In > 1 corresponding to the lower and higher energies, respectively. The phenomenon is discussed in terms of atomic orbital energies, which are strongly different for indium and nitrogen, therefore both excess atom incorporation and elimination could change the optical gap. We estimate such trends using the approximation of the empirical nearest‐neighbor tight binding theory. It is also demonstrated that resonant absorption in In‐enriched regions is an additional factor lowering an effective absorption edge. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)