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Growth Parameters and Substrate Treatment for the MOCVD Growth of ZnO
Author(s) -
Wang Jinzhong,
Sallet Vincent,
Amiri Gaëlle,
Rommeluère JeanFrançois,
Lusson Alain,
Rzepka E.,
Lewis John E.,
Galtier Pierre,
Gorochov Ouri
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200420068
Subject(s) - metalorganic vapour phase epitaxy , full width at half maximum , photoluminescence , raman spectroscopy , diethylzinc , substrate (aquarium) , sapphire , materials science , crystal (programming language) , analytical chemistry (journal) , epitaxy , thin film , exciton , microstructure , scanning electron microscope , chemistry , crystallography , optics , optoelectronics , nanotechnology , metallurgy , composite material , laser , physics , condensed matter physics , organic chemistry , oceanography , computer science , layer (electronics) , programming language , enantioselective synthesis , catalysis , geology
ZnO films were grown on sapphire substrates using vertical MOCVD system with DEZn and tertiary‐butanol as precursors, respectively. The benefits of substrate treatment on the microstructure and morphology of the film were shown. The influences of growth temperature and partial pressure ratio R VI/II on crystal quality were investigated in detail. XRD, Electron Channeling Pattern and Raman spectra indicated that the highest crystal quality film was grown at 425 °C when the partial pressure ratio of tertiary‐butanol (t‐Bu) to diethylzinc (DEZn) was 8. X‐ray rocking curves exhibit Full Width at Half Maximum (FWHM) of 607 arcsec. A strong exciton emission peak appears in the photoluminescence (PL) spectra. Furthermore, the peak position has a slight shift to low energy with increase of the growth temperature. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)