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Method for the analysis of nonselective spectra of optically stimulated electron emission from irradiated dielectrics
Author(s) -
Zatsepin A. F.,
Biryukov D. Yu.,
Kortov V. S.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200420054
Subject(s) - excited state , irradiation , dielectric , amorphous solid , emission spectrum , electron , spectral line , ionization , materials science , radiation , oxygen , kinetic energy , atomic physics , molecular physics , analytical chemistry (journal) , chemistry , optoelectronics , optics , ion , physics , crystallography , organic chemistry , quantum mechanics , astronomy , chromatography , nuclear physics
A method has been proposed and substantiated for processing of nonselective optically stimulated electron emission (OSEE) spectra of irradiated crystalline and amorphous dielectrics. This method allows the separation of the emission contribution of discrete centers taking into account effects of radiation‐induced electrization of materials and the unsteady state of the electron emission. Separation of OSEE selective bands facilitates the establishment of the origin of discrete emission‐active centers and makes it possible to estimate the concentration and parameters of radiation defects localized in surface layers. The quantum yields of OSEE and ionization barriers of optically excited defects are calculated using kinetic and corrected isochronal temperature dependences of the emission current. Some capabilities of the method have been demonstrated by an example of glassy SiO 2 and crystalline Be 2 SiO 4 . Oxygen‐deficient centers (ODCs), bulk and surface E′‐centers, and also non‐bridging oxygen hole centers (NBOHCs) have been recorded. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)