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High‐temperature anomalies in resistivity and thermoelectric power of thick‐film resistors and their conduction mechanism
Author(s) -
Abdurakhmanov G.,
Abdurakhmanova N. G.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200420036
Subject(s) - resistor , seebeck coefficient , electrical resistivity and conductivity , materials science , atmospheric temperature range , thermoelectric effect , thermal conduction , condensed matter physics , maxima , composite material , mineralogy , electrical engineering , thermodynamics , chemistry , thermal conductivity , physics , art , voltage , performance art , art history , engineering
Resistivity ρ and thermoelectric power S of RuO 2 ‐based thick‐film resistors were measured in tempera‐ ture range T = 77–1100 K. Sharp maxima of ρ and S occur at 1000 K. ρ = 7.5 × 10 3 Ω cm and S = +90 μV/K at the maxima, while ρ = 2.5 × 10 3 Ω cm and S = +10 μV/K at room temperature. Thermoelectric power becomes negative at temperatures in the range 700–800 K and 1000–1070 K. It is assumed that the peculiarities of ρ and S are caused by structural changes in compounds of the lead‐silicate glass used in the thick‐film resistors. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)