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Poly[2‐methoxy‐5‐(2′‐ethyl‐hexyloxy)‐1,4‐phenylene vinylene] (MEH‐PPV) thin film spin‐coated on porous n‐type GaAs
Author(s) -
Beji L.,
Ben Jomaa T.,
Ltaeif A.,
Bouazizi A.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200420032
Subject(s) - materials science , scanning electron microscope , phenylene , photoluminescence , spin coating , porosity , quenching (fluorescence) , thin film , chemical engineering , polymer chemistry , polymer , optoelectronics , fluorescence , nanotechnology , composite material , optics , physics , engineering
Poly[2‐methoxy‐5‐(2′‐ethyl‐hexyloxy)‐1,4‐phenylene vinylene] (MEH‐PPV) was grown on porous GaAs (π‐GaAs) by spin coating and studied via scanning electron microscopy (SEM) and room temperature photoluminescence (PL). The SEM investigation revealed that MEH‐PPV was grown deeply in the porous structure and had a filament‐like shape. The PL result showed that a strong quenching effect occurred when using π‐GaAs. This effect was suggested to be due to photoinduced charge transfer at the MEH‐PPV/GaAs nanocrystallite interface. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)