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Surface passivation of GaAs using a Ge interface control layer
Author(s) -
Jishiashvili D.,
Gobsch G.,
Ecke G.,
Gobronidze V.,
Mtskeradze G.,
Shiolashvili Z.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200420026
Subject(s) - passivation , auger electron spectroscopy , materials science , amorphous solid , semiconductor , transmission electron microscopy , layer (electronics) , optoelectronics , analytical chemistry (journal) , crystallography , chemistry , nanotechnology , physics , chromatography , nuclear physics
The effective surface passivation is a key to achieve useful metal–insulator–semiconductor devices on GaAs. In this work, the composition and structure of the pyrolytic GeO x N y film deposited on GaAs in the hydrazine vapour has been studied by Auger electron spectroscopy and transmission electron microscopy. The capacitance‐voltage characteristics was used to investigate the GeO x N y –GaAs interface in the frequency range of 1 kHz–1 MHz. The deposited insulator film has a layered structure and consists of a thin (∼2–4 nm) amorphous Ge interface control layer adjacent to the GaAs, followed by the outer GeO x N y film. It is found that a high quality interface is formed with the minimum interface state density of 3 × 10 11 cm –2 eV –1 at midgap energies in GaAs. It is suggested that a good bond matching at the GaAs–Ge interface and coherent termination of bonds at both sides of the Ge interface control layer are the reason for perfect passivating properties of the GeO x N y film. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)