Ferroelectric properties of Sm‐doped Bi 4 Ti 3 O 12  thin films | Zendy

Chen M. | Zendy; Liu Z. L. | Zendy; Wang Y. | Zendy; Yao K. L. | Zendy

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Ferroelectric properties of Sm‐doped Bi 4 Ti 3 O 12 thin films

Author(s) -

Chen M.,

Liu Z. L.,

Wang Y.,

Yao K. L.

Publication year - 2005

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200420016

Subject(s) - ferroelectricity , materials science , thin film , coercivity , doping , bismuth titanate , pulsed laser deposition , analytical chemistry (journal) , bismuth , polarization (electrochemistry) , dielectric , mineralogy , nanotechnology , condensed matter physics , optoelectronics , metallurgy , chemistry , physics , chromatography

Sm‐doped bismuth titanate and random oriented Bi 4– x Sm x Ti 3 O 12 (BST) thin films were fabricated on Pt/Ti/SiO 2 /Si substrates using a pulsed laser deposition method. The structures and the ferroelectric properties of the films were investigated. Sm doping leads to a marked improvement in the remanent polarization ( P r ) and the coercive field ( E c ). At an applied electric field of 100 kV/cm, P r and E c of a BST ( x = 0.8) film annealed at 650 °C are 20.5 µC/cm 2 and 60 kV/cm, respectively. However, after 3 × 10 10 switching cycles, 20% degradation of 2 P r is observed in the film. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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