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P‐type ZnO thin films prepared by plasma molecular beam epitaxy using radical NO
Author(s) -
Liang H. W.,
Lu Y. M.,
Shen D. Z.,
Liu Y. C.,
Yan J. F.,
Shan C. X.,
Li B. H.,
Zhang Z. Z.,
Zhang J. Y.,
Fan X. W.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200420012
Subject(s) - molecular beam epitaxy , photoluminescence , thin film , analytical chemistry (journal) , dopant , sapphire , doping , materials science , acceptor , chemistry , epitaxy , optoelectronics , laser , nanotechnology , optics , organic chemistry , physics , layer (electronics) , condensed matter physics
N‐doped p‐type ZnO thin films were grown by plasma molecular beam epitaxy (P‐MBE) on c ‐plane sapphire (Al 2 O 3 ) using radical NO as oxygen source and nitrogen dopant. The reproducible ZnO thin films have maximum net hole concentration ( N A – N D ) of 1.2 × 10 18 cm –3 and minimum resistivity of 9.36 Ω cm. The influence of N incorporation on the quality of the ZnO thin films was studied using X‐ray diffraction and absorption spectra. The photoluminescence spectra at 77 K of p‐type ZnO thin films are dominated by the emission from donor–acceptor pair recombination. The formation mechanism of p‐type ZnO is explained by the optical emission spectra of radical N 2 and radical NO. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)