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Structural, electrical and optical properties of sol–gel derived yttrium doped ZnO films
Author(s) -
Kaur Ravinder,
Singh A. V.,
Mehra R. M.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200420006
Subject(s) - yttrium , annealing (glass) , doping , materials science , electrical resistivity and conductivity , dopant , crystallite , transmittance , absorption edge , analytical chemistry (journal) , thin film , dip coating , sol gel , atmospheric temperature range , mineralogy , oxide , metallurgy , composite material , optoelectronics , band gap , nanotechnology , coating , chemistry , electrical engineering , chromatography , engineering , physics , meteorology
Undoped and yttrium doped zinc oxide thin films have been deposited on corning glass by dip coating technique. The effect of doping (0–4 wt%) and annealing temperature (300–500 °C) on the structural, optical and electrical properties of the produced films have been investigated. All the films show polycrystalline nature at an annealing temperature of 350 °C. The preferential c ‐axis growth with lowest full width at half maximum of (002) reflection peak is seen only up to an optimum annealing temperature. A blue shift in the absorption edge is observed both, with increase in dopant concentration and annealing temperature. The electrical resistivity of the films decreases by doping with yttrium. The lowest resistivity of 3.5 × 10 –2 Ω cm and an average transmittance of 86% in the visible range has been obtained in YZO films doped with 3 wt% of yttrium and annealed at 450 °C. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)