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Dependence of magnetic properties on the growth conditions of MnGaN grown by rf N plasma molecular beam epitaxy
Author(s) -
Haider Muhammad B.,
Constantin Costel,
AlBrithen Hamad,
Caruntu Gabriel,
O'Connor Charles J.,
Smith Arthur R.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200420004
Subject(s) - magnetization , molecular beam epitaxy , ferromagnetism , metal , materials science , metalorganic vapour phase epitaxy , condensed matter physics , chemistry , epitaxy , magnetic field , nanotechnology , physics , metallurgy , layer (electronics) , quantum mechanics
MnGaN has been grown by radio frequency N plasma‐assisted molecular beam epitaxy. MnGaN samples were grown on MOCVD GaN(0001)/sapphire(0001) at substrate temperature of 550 °C under different Ga/N flux ratios leading to 4 different growth regimes: N‐rich, slight metal‐rich, metal‐rich, and Ga‐rich. It is found that in the case of MnGaN, Mn incorporation and hence magnetic properties clearly depend on the growth conditions. Briefly, it is found that the N‐rich conditions give a sample with much larger magnetization compared to the other samples. Slight metal‐rich and metal‐rich grown samples have very little magnetization. Finally, Ga‐rich grown samples have intermediate level of magnetization. Possible origins of the magnetization are discussed. Ga‐rich magnetization is attributed to accumulates, but N‐rich magnetization is attributed to carrier‐mediated ferromagnetism and/or ferromagnetism due to clusters. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)