Fabrication of AlGaN/GaN double‐insulator metal–oxide–semiconductor high‐electron‐mobility transistors using SiO 2  and SiN as gate insulators | Zendy

Balachander Krishnan | Zendy; Arulkumaran Subramaniam | Zendy; Sano Y. | Zendy; Egawa Takashi | Zendy; Baskar Krishnan | Zendy

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Fabrication of AlGaN/GaN double‐insulator metal–oxide–semiconductor high‐electron‐mobility transistors using SiO 2 and SiN as gate insulators

Author(s) -

Balachander Krishnan,

Arulkumaran Subramaniam,

Sano Y.,

Egawa Takashi,

Baskar Krishnan

Publication year - 2005

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.200410002

Subject(s) - materials science , optoelectronics , transistor , fabrication , insulator (electricity) , dielectric , leakage (economics) , saturation current , semiconductor , wide bandgap semiconductor , voltage , electrical engineering , medicine , alternative medicine , pathology , economics , macroeconomics , engineering

We report on the fabrication of AlGaN/GaN double‐insulator MOSHEMTs using SiO 2 and SiN as the prime gate insulators. Both the dielectrics showed enhanced saturation current density and pinch‐off voltage compared to conventional HEMTs. The SiO 2 /SiN/AlGaN/GaN MOSHEMTs exhibited a low current collapse and low leakage current compared to SiN MISHEMTs and unpassivated HEMTs. However, the SiN/SiO 2 /AlGaN/GaN MOSHEMTs exhibited a lower current collapse coupled with moderate leakage current compared to SiO 2 MOSHEMTs and unpassivated HEMTs. The comparison of device dc characteristics of double‐insulator MOSHEMTs with single‐insulator MOSHEMTs revealed its superiority in reducing the problem of current collapse and leakage current simultaneously. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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