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Fabrication of AlGaN/GaN double‐insulator metal–oxide–semiconductor high‐electron‐mobility transistors using SiO 2 and SiN as gate insulators
Author(s) -
Balachander Krishnan,
Arulkumaran Subramaniam,
Sano Y.,
Egawa Takashi,
Baskar Krishnan
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200410002
Subject(s) - materials science , optoelectronics , transistor , fabrication , insulator (electricity) , dielectric , leakage (economics) , saturation current , semiconductor , wide bandgap semiconductor , voltage , electrical engineering , medicine , alternative medicine , pathology , economics , macroeconomics , engineering
We report on the fabrication of AlGaN/GaN double‐insulator MOSHEMTs using SiO 2 and SiN as the prime gate insulators. Both the dielectrics showed enhanced saturation current density and pinch‐off voltage compared to conventional HEMTs. The SiO 2 /SiN/AlGaN/GaN MOSHEMTs exhibited a low current collapse and low leakage current compared to SiN MISHEMTs and unpassivated HEMTs. However, the SiN/SiO 2 /AlGaN/GaN MOSHEMTs exhibited a lower current collapse coupled with moderate leakage current compared to SiO 2 MOSHEMTs and unpassivated HEMTs. The comparison of device dc characteristics of double‐insulator MOSHEMTs with single‐insulator MOSHEMTs revealed its superiority in reducing the problem of current collapse and leakage current simultaneously. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)