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Studies on electron beam evaporated ZrO 2 /AlGaN/GaN metal–oxide–semiconductor high‐electron‐mobility transistors
Author(s) -
Balachander Krishnan,
Arulkumaran Subramaniam,
Ishikawa Hiroyasu,
Baskar Krishnan,
Egawa Takashi
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200409084
Subject(s) - materials science , x ray photoelectron spectroscopy , optoelectronics , transistor , leakage (economics) , electron mobility , gate dielectric , threshold voltage , semiconductor , oxide , current density , cathode ray , analytical chemistry (journal) , electron , voltage , electrical engineering , chemistry , nuclear magnetic resonance , metallurgy , physics , quantum mechanics , economics , macroeconomics , engineering , chromatography
Metal–oxide–semiconductor high‐electron‐mobility transistors were demonstrated on AlGaN/GaN with electron beam (EB) evaporated ZrO 2 . The composition of the EB deposited ZrO 2 thin films was confirmed using X‐ray photoelectron spectroscopy (XPS). The fabricated ZrO 2 ‐based MOSHEMTs exhibited high positive gate voltage of operation up to +7 V with low gate leakage current. For a comparison, conventional high‐electron‐mobility transistors (HEMTs) were also fabricated with identical device dimensions. The maximum drain current densities of 1168 and 538 mA/mm were observed on MOSHEMTs and HEMTs, respectively. Low gate leakage current density of four orders of magnitude was observed on ZrO 2 ‐based MOSHEMTs when compared with the conventional HEMTs. The observation of high forward on‐voltage with low gate leakage current density and high positive operational voltage reveals the importance of ZrO 2 dielectric films for MOSHEMT devices. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)