Premium
Enhancement of UV luminescence in sol‐gel prepared ZnO thin films by incorporation of Mg
Author(s) -
Chakrabarti S.,
Kar S.,
Dev A.,
Chaudhuri S.
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200406925
Subject(s) - photoluminescence , annealing (glass) , luminescence , materials science , analytical chemistry (journal) , sol gel , oxygen , thin film , quartz , band gap , atmosphere (unit) , mineralogy , nanotechnology , chemistry , optoelectronics , metallurgy , chromatography , physics , organic chemistry , thermodynamics
Well‐crystallized Mg x Zn 1– x O films were deposited on quartz substrates by sol‐gel technique with a varia‐ tion of x value from 0 to 0.15. The samples were annealed at different temperatures (500 °C to 700 °C) in air and oxygen atmosphere to study the effect of annealing atmosphere on the luminescence properties of the films. The optical, microstructural and photoluminescence properties of the films were studied. It was found that the band gap of the films increased with increasing Mg concentration ( x value). A remarkable change in the photoluminescence spectra of the films for x = 0.05 was observed by varying the annealing atmosphere. Highly intense UV emission at room temperature could be obtained by annealing the Mg 0.05 Zn 0.95 O film in static oxygen atmosphere, while the intensity of the visible defect related luminescence could be reduced, resulting in a high intensity ratio (∼100) of the two. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)