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Poole–Frenkel effect in Er doped SnO 2 thin films deposited by sol‐gel‐dip‐coating
Author(s) -
Morais Evandro A.,
Scalvi Luis V. A.,
Ribeiro Sidney J. L.,
Geraldo Viviany
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200406919
Subject(s) - poole–frenkel effect , doping , materials science , electrical resistivity and conductivity , thin film , electric field , analytical chemistry (journal) , thermal conduction , schottky diode , activation energy , schottky barrier , condensed matter physics , optoelectronics , nanotechnology , chemistry , composite material , electrical engineering , diode , physics , engineering , organic chemistry , chromatography , quantum mechanics
Abstract Electrical properties of Er‐doped SnO 2 thin films obtained by sol‐gel‐dip‐coating technique were measured. When compared to undoped tin dioxide, rare‐earth doped films present much higher resistivity, indicating that Er 3+ presents an acceptor–like character into the matrix, which leads to a high degree of electric charge compensation. Current–voltage characteristics, measured above room temperature for Er‐doped films, lead to non‐linear behavior and two conduction regimes. In the lower electric field range the conduction is dominated by Schottky emission over the grain boundary potential barrier, which presents an average value of 0.85 eV. Increasing the applied bias, a second regime of conduction is observed, since the Poole–Frenkel coulombic barrier lowering becomes a significant effect. The obtained activation energy for ionization is 0.67 eV. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)