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Growth of In 2 O 3 thin films on silicon by the metalorganic chemical vapor deposition method
Author(s) -
Kim Nam Ho,
Myung Ju Hyun,
Kim Hyoun Woo,
Lee Chongmu
Publication year - 2005
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.200406916
Subject(s) - metalorganic vapour phase epitaxy , chemical vapor deposition , silicon , materials science , full width at half maximum , substrate (aquarium) , indium , combustion chemical vapor deposition , thin film , analytical chemistry (journal) , diffraction , metal , oxide , carbon film , epitaxy , optoelectronics , chemistry , nanotechnology , optics , metallurgy , layer (electronics) , oceanography , physics , geology , chromatography
We have deposited indium oxide (In 2 O 3 ) films on silicon substrates by the metal organic chemical vapor deposition (MOCVD). We have investigated the effect of substrate temperature on growth and structural properties of films in the range of 200–300 °C. The films had a preferred orientation along [111] direction, with the X‐ray diffraction (XRD) full width at half‐maximum (FWHM) of less than 0.4°.