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Sensitiveness of Porous Silicon‐Based Nano‐Energetic Films
Author(s) -
Plummer Andrew,
Kuznetsov Valerian A.,
Gascooke Jason,
Shapter Joe,
Voelcker Nicolas H.
Publication year - 2016
Publication title -
propellants, explosives, pyrotechnics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.56
H-Index - 65
eISSN - 1521-4087
pISSN - 0721-3115
DOI - 10.1002/prep.201600027
Subject(s) - materials science , wafer , silicon , perchlorate , oxidizing agent , porous silicon , explosive material , composite material , nanoporous , nano , chemical engineering , nanotechnology , ion , optoelectronics , chemistry , organic chemistry , engineering
Nanoporous silicon (pSi) films on a silicon wafer were loaded with sodium perchlorate and perfluoropolyether (PFPE) oxidizing agents. Sensitiveness to impact, friction and electrostatic discharge (ESD) of the resulting energetic thin films were investigated. It was observed that pSi loaded with perchlorate was sensitive at the lowest limit of detection for the available equipment (<4.9 J impact energy, <5 N friction force, and <45 mJ ESD spark energy). When loaded with PFPE the material was very sensitive to impact (<4.9 J), moderately sensitive to ESD (between 45 and 100 mJ) and insensitive to friction (>360 N). pSi loaded with either perchlorate or PFPE displayed behavior during sensitiveness testing similar to other primary explosive materials.