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Synthesis and Simulation Study of Right Silver Bipyramids via Seed‐Mediated Growth cum Selective Oxidative Etching Approach
Author(s) -
Tavakkoli Yaraki Mohammad,
Daqiqeh Rezaei Soroosh,
Middha Eshu,
Tan Yen Nee
Publication year - 2020
Publication title -
particle and particle systems characterization
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.877
H-Index - 56
eISSN - 1521-4117
pISSN - 0934-0866
DOI - 10.1002/ppsc.202000027
Subject(s) - etching (microfabrication) , silver bromide , aqueous solution , bromide , chemistry , bromine , ascorbic acid , chemical engineering , nanostructure , yield (engineering) , electric field , nanotechnology , materials science , inorganic chemistry , organic chemistry , composite material , food science , layer (electronics) , engineering , silver halide , physics , quantum mechanics
In this study, a simple method to synthesize right silver bipyramid (AgBP) nanostructures via the seed‐mediated growth cum oxidative etching approach in aqueous solution is developed. The key strategy of this method is to control the growth and etching process by careful adjustment of the reactants concentration. Ascorbic acid (AA) is used to reduce silver precursor while cetyltrimethylammonium bromide stabilizer is used to direct the preferential growth of (100) facets. The presence of Cu 2+ and AA in the reaction mixture also enable in‐situ generation of H 2 O 2 , leading to selective etching of (111) facets, which is crucial to the formation of anisotropic AgBPs. The structure‐properties of AgBPs is systematically investigated through a series of experiments and theoretical simulations. Transmission electron microscope images and X‐ray diffraction patterns of the as‐synthesized AgBPs show the formation of single crystalline twined nanostructures with a relatively high yield. These results suggest the important role of the excitation of electric dipole in enhancing the electric field at the six sharp corners of AgBPs, making them especially promising for a wide range of technological applications including surface‐enhanced Raman scattering with a significant enhancement factor of 1.50 × 10 5 as demonstrated herein.