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p‐Type Dye‐Sensitized Solar Cells with a CdSeS Quantum‐Dot‐Sensitized NiO Photocathode for Outstanding Short‐Circuit Current
Author(s) -
Kong Wenping,
Li Shengjun,
Chen Zeng,
Wei Chaochao,
Li Wei,
Li Tao,
Yan Ying,
Jia Xiyang,
Xu Binghua,
Zhang Weifeng
Publication year - 2015
Publication title -
particle and particle systems characterization
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.877
H-Index - 56
eISSN - 1521-4117
pISSN - 0934-0866
DOI - 10.1002/ppsc.201500174
Subject(s) - photocathode , non blocking i/o , quantum dot , photoluminescence , materials science , optoelectronics , energy conversion efficiency , short circuit , current density , chemistry , electron , physics , voltage , biochemistry , quantum mechanics , catalysis
CdSeS quantum dots (QDs) are firstly introduced into a NiO photocathode for photocathodic dye‐sensitized solar cells (p‐DSCs). The optimized sample exhibits a short‐circuit density (14.68 mA cm −2 ) and power conversion efficiency (1.02%) that are almost one order of magnitude higher than the reported value of p‐QDSCs. Steady‐state photoluminescence and time‐resolved photoluminescence measurements indicate that the photoexcited holes can be almost completely injected from CdSeS QDs into the valence band of NiO. At the same time, it can be observed from electrochemical impedance spectra measurements.