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Phase mixing in GaSb nanocrystals synthesized by nonequilibrium plasma aerotaxy
Author(s) -
Uner Necip B.,
Thimsen Elijah
Publication year - 2020
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.201900233
Subject(s) - vaporization , nanocrystal , materials science , plasma , stoichiometry , non equilibrium thermodynamics , nanometre , semiconductor , phase (matter) , mixing (physics) , chemical physics , chemical engineering , nanotechnology , analytical chemistry (journal) , chemistry , thermodynamics , optoelectronics , composite material , physics , organic chemistry , chromatography , quantum mechanics , engineering
III–V semiconductor nanocrystals are an important class of optoelectronic materials. However, the gas‐phase synthesis of these materials, especially of the stibnides, has been left relatively unexplored. In this study, we demonstrate the synthesis of free‐standing GaSb nanocrystals for the first time, using a novel gas‐phase process. We show that when elemental aerosols are used as precursors for Ga and Sb, the elements mix at the nanometer length scale as the aerosols pass through a nonequilibrium plasma reactor. At sufficiently high plasma power, the mixing produces free‐standing GaSb nanocrystals, with a small amount of excess Ga segregated at the periphery of the particles. The reaction is initiated by vaporization of elemental aerosols in the plasma despite the low‐background temperature. Ion bombardment determines the extent of vaporization of Ga and Sb and thereby controls the ensemble stoichiometry and reaction rates.