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Pore sealing mechanism in OSG low‐ k films under ion bombardment
Author(s) -
Voronina Ekateri.,
Sycheva Anastasia A.,
Lopaev Dmitry V.,
Rakhimova Tatyana V.,
Rakhimov Alexander T.,
Proshina Olga V.,
Voloshin Dmitry G.,
Zyryanov Sergey M.,
Zotovich Alexey I.,
Mankelevich Yuri A.
Publication year - 2020
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.201900165
Subject(s) - nanoporous , materials science , dielectric , ion , composite material , low k dielectric , degradation (telecommunications) , irradiation , layer (electronics) , chemical engineering , nanotechnology , optoelectronics , chemistry , electronic engineering , physics , nuclear physics , engineering , organic chemistry
Organosilicate glass (OSG) nanoporous films with a low dielectric constant (low‐ k ) are used as interlayer‐dielectric insulators for advanced interconnects of ultra‐large‐scale integration devices. Plasma treatment of these materials can lead to their degradation resulting in increasing k ‐value and reducing lifetime and reliability. However, for some OSG films, the densification of the uppermost surface layer and pore sealing was observed under ion irradiation. This paper presents the results of a combined experimental and modeling study of mechanisms of low‐ k film densification by ion bombardment depending on the film‐pore size, ion type, and energy. The obtained results reveal that experimentally observed densification and pore sealing of uppermost layers of OSG films occur via collapse of near‐surface pores under the impact of energetic ions.