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Maskless atmospheric pressure PECVD of SiO x films on both planar and nonplanar surfaces using a flexible atmospheric microplasma generation device
Author(s) -
Wang Tao,
Liu Jingquan,
Shi Liping,
Zhang Xingquan,
Lv Li,
Zhang Guotao,
Wang Jun
Publication year - 2020
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.201900142
Subject(s) - microplasma , plasma enhanced chemical vapor deposition , materials science , micropatterning , atmospheric pressure , atmospheric pressure plasma , optoelectronics , chemical vapor deposition , planar , plasma , analytical chemistry (journal) , nanotechnology , chemistry , oceanography , physics , quantum mechanics , geology , computer graphics (images) , chromatography , computer science
Abstract This paper presents the use of a simple‐arranged, low‐cost, and flexible atmospheric pressure microplasma generation device (μPGD) with controlled gas discharge to achieve maskless atmospheric plasma‐enhanced chemical vapor deposition (PECVD) of SiO x films on both planar and nonplanar surfaces. The μPGD is mainly composed of a copper–polyimide–copper sandwich structure with predefined microfluidic channels. Uniform microplasmas of different shapes and dimensions were generated in the open air. SiO x films were masklessly deposited with well‐defined edges and good feature transfer fidelity. The SEM, EDS, XPS, and FTIR spectra of the deposited film confirm the SiO x structure. These results indicate that μPGD is able to achieve maskless PECVD of SiO x films in the open air, especially micropatterning on nonplanar surfaces.