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SiCN:H thin films deposited by MW‐PECVD with liquid organosilicon precursor: Gas ratio influence versus properties of the deposits
Author(s) -
Plujat Béatrice,
Glénat Hervé,
Bousquet Angélique,
Frézet Lawrence,
Hamon Jonathan,
Goullet Antoine,
Tomasella Éric,
Hernandez Emmanuel,
Quoizola Sébastien,
Thomas Laurent
Publication year - 2020
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.201900138
Subject(s) - tetramethylsilane , plasma enhanced chemical vapor deposition , thin film , organosilicon , x ray photoelectron spectroscopy , analytical chemistry (journal) , ellipsometry , materials science , argon , chemical vapor deposition , spectroscopy , silicon , nanoindentation , chemical engineering , chemistry , nanotechnology , composite material , organic chemistry , polymer chemistry , engineering , physics , quantum mechanics , metallurgy
Silicon carbonitride SiCN:H thin films are deposited with microwave plasma‐enhanced chemical vapor deposition. Argon, ammonia, and tetramethylsilane (TMS) (Ar/NH 3 /Si(CH 3 ) 4 ) are used for the gas mixture. Plasma gas phase chemistry is studied using optical emission spectroscopy according to the TMS/NH 3 gas flow ratio, highlighting the presence of three discharge regimes. Then, the deposited SiCN:H thin films are analyzed by X‐ray photoelectron spectroscopy and energy dispersive X‐ray spectroscopy, enabling us to correlate plasma and film chemistry. Thus, we define three thin film families corresponding to the three discharge regimes occurring in the plasma phase. Properties of these families are studied: Optical properties by spectroscopic ellipsometry, electrical properties by I–V measurements and electron spin resonance, and mechanical properties by nanoindentation and tribology.