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Radial distribution of C 4 H 8 –H 2 –TMS plasma during plasma‐enhanced chemical vapor deposition of Si‐doped glow discharge polymers
Author(s) -
Ai Xing,
He XiaoShan,
Chen Guo,
Zhang Ling,
Huang JingLin,
Du Kai,
He ZhiBing
Publication year - 2020
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.201900075
Subject(s) - tetramethylsilane , analytical chemistry (journal) , chemical vapor deposition , x ray photoelectron spectroscopy , glow discharge , hydrogen , dissociation (chemistry) , fourier transform infrared spectroscopy , plasma enhanced chemical vapor deposition , silicon , plasma , chemistry , materials science , nuclear magnetic resonance , organic chemistry , physics , quantum mechanics
Abstract A silicon‐doped glow discharge polymer (Si‐GDP) was prepared by plasma‐enhanced chemical vapor deposition technique of mixtures of trans‐2‐butene (C 4 H 8 ), hydrogen (H 2 ), and tetramethylsilane (TMS). The plasma parameters were characterized by mass spectrometry. The film properties of Si‐GDP were investigated by Fourier transform infrared spectroscopy and X‐ray photoelectron spectroscopy. At a TMS flow of 0.15 cm 3 /min, the radial distribution of the relative intensities of CH fragment ions was uniform, which indicates balanced dissociation and polymerization. As the radial distance increases, the ion energy decreases, and the ratio of sp 3 /sp 2 carbon and the atomic ratio of Si increases. The purpose of this work was to explore correlations between C 4 H 8 /H 2 /TMS plasma parameters and Si‐GDP film properties.