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Ion impingement effect on the structure and optical properties of Ti x Si 1− x O 2 films deposited by ICP‐PECVD
Author(s) -
Li Dayu,
Dai Shuyu,
Goullet Antoine,
Granier Agnès
Publication year - 2019
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.201900034
Subject(s) - hexamethyldisiloxane , plasma enhanced chemical vapor deposition , analytical chemistry (journal) , materials science , rutile , inductively coupled plasma , ion , chemical vapor deposition , titanium , substrate (aquarium) , deposition (geology) , thin film , band gap , phase (matter) , plasma , chemistry , nanotechnology , metallurgy , optoelectronics , paleontology , physics , oceanography , organic chemistry , chromatography , quantum mechanics , sediment , geology , biology
Abstract Ti x Si 1− x O 2 films are grown by plasma‐enhanced chemical vapor deposition from oxygen‐rich O 2 /titanium tetraisopropoxide/hexamethyldisiloxane radiofrequency inductively coupled plasmas at low pressure. By applying a substrate bias of −50 V, the ion energy is increased from 15 to 75 eV, which has almost no effect on the by‐products, whereas the deposition rate is decreased and the Ti/Si atomic ratio in the film is increased. For the lowest hexamethyldisiloxane fraction in precursor, applying a −50 V bias leads to the formation of TiO 2 in rutile phase in the film. The film optical properties (optical index and band gap) are shown to be mainly governed by the film chemical composition.