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Damage recovery and low‐damage etching of ITO in H 2 /CO plasma: Effects of hydrogen or oxygen
Author(s) -
Hirata Akiko,
Fukasawa Masanaga,
Kugimiya Katsuhisa,
Karahashi Kazuhiro,
Hamaguchi Satoshi,
Nagaoka Kojiro
Publication year - 2019
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.201900029
Subject(s) - hydrogen , etching (microfabrication) , plasma etching , oxygen , plasma , materials science , oxide , reactive ion etching , analytical chemistry (journal) , chemistry , layer (electronics) , nanotechnology , metallurgy , environmental chemistry , physics , organic chemistry , quantum mechanics
Hydrogen‐containing plasma etching of tin‐doped indium oxide (ITO) causes surface reduction damage induced by the plasma itself. Damage recovery by using O‐containing plasma and low‐damage etching in plasma with hydrogen and oxygen were investigated. While recovery was possible with O 2 plasma after H‐containing plasma exposure, O 2 plasma caused excess oxidation of the ITO surface, which can degrade device properties. Simultaneous injection of hydrogen and oxygen recovered the reduced ITO to its initial state. The etching performance was also investigated; low‐damage etching was achieved with hydrogen and oxygen‐mixed plasma by controlling the balance between surface reduction and oxidation.