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Evolution of photoresist layer structure and surface morphology under fluorocarbon‐based plasma exposure
Author(s) -
Pranda Adam,
Gutierrez Razo Sandra A.,
Fourkas John T.,
Oehrlein Gottlieb S.
Publication year - 2019
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.201900026
Subject(s) - photoresist , etching (microfabrication) , layer (electronics) , fluorocarbon , materials science , surface roughness , plasma etching , plasma , reactive ion etching , surface layer , surface modification , deposition (geology) , amorphous solid , analytical chemistry (journal) , chemical engineering , composite material , chemistry , crystallography , organic chemistry , paleontology , physics , quantum mechanics , sediment , engineering , biology
Ion bombardment of photoresist materials during plasma etching results in the formation of a surface dense amorphous carbon (DAC) layer that contributes to both etch resistance and the development of surface roughness. Real‐time ellipsometric measurements/analysis reveals that a C 4 F 8 ‐containing plasma interacts with an Ar‐plasma‐formed DAC layer to produce a modified DAC/fluorocarbon (FC) layer by FC deposition/diffusion of fluorine into the surface. The depletion of the DAC layer via modification and ion bombardment causes the etch rate of the bulk layer to increase. As the modified surface layer is formed, a noticeable decrease in surface roughness decrease is observed. These findings provide an understanding of the mechanisms of atomic layer etching processes in photoresist materials.