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Gas barrier and mechanical properties of a single‐layer silicon oxide film prepared by roll‐to‐roll PECVD system
Author(s) -
Cho SeongKeun,
Cho TaeYeon,
Lee Won Jae,
Um Min Seop,
Choi Woo Jin,
Lee JaeHeung,
Ryu Juwhan,
Choa SungHoon
Publication year - 2019
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.201800170
Subject(s) - plasma enhanced chemical vapor deposition , materials science , surface roughness , silicon oxide , layer (electronics) , composite material , chemical vapor deposition , oxide , silicon , substrate (aquarium) , surface finish , barrier layer , nanotechnology , optoelectronics , silicon nitride , metallurgy , oceanography , geology
We presented a single‐layer silicon oxide (SiOx) barrier film with excellent moisture barrier performance and flexibility. High quality, continuous, and large‐area barrier film was deposited on polyethyleneterephthalate substrate using a roll‐to‐roll PECVD for large‐scale production. The effects of the reaction gas flow ratio of N 2 O/SiH 4 (R) on the characteristics of the SiOx film were systematically analyzed in terms of the optical properties, surface roughness, film density, hardness, chemical composition, and water vapor transmission rate. The SiOx film exhibited the best film density, hardness, surface roughness, and superior barrier performance of 1.6 × 10 −3 g · m −2 · d −2 at R = 1.5. The SiOx barrier film also exhibited excellent flexibility which bent up to 2 mm and withstood the repeated bending of 10 000 cycles.