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Growth mechanisms of sulfur‐rich plasma polymers: Binary gas mixtures versus single precursor
Author(s) -
Kasparek Evelyne,
Thiry Damien,
Tavares Jason R.,
Wertheimer Michael R.,
Snyders Rony,
GirardLauriault PierreLuc
Publication year - 2018
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.201800036
Subject(s) - plasma polymerization , chemistry , x ray photoelectron spectroscopy , sulfur , polymer , derivatization , hydrogen sulfide , molecule , polymerization , chemical vapor deposition , acetylene , analytical chemistry (journal) , fourier transform infrared spectroscopy , mass spectrometry , plasma enhanced chemical vapor deposition , polymer chemistry , organic chemistry , chemical engineering , chromatography , engineering
Thiol (SH)‐terminated surfaces have gained interest over the past years due to their potential applications, especially in the biomedical field. In this work, SH‐terminated films have been prepared by “co‐polymerizing” gas mixtures of acetylene (C 2 H 2 ) and hydrogen sulfide (H 2 S) using low‐pressure r.f. plasma‐enhanced chemical vapor deposition. R.f. power greatly influences the deposition rate, sulfur content, [S], and thiol concentration, [SH], of the films, as confirmed by XPS (both before and after chemical derivatization), FTIR, and mass spectrometry measurements. These data are compared with those obtained in a similar discharge by using a single molecule precursor, propanethiol. Among other differences, it is demonstrated that [SH] is higher when using binary gas mixtures compared to the single molecule precursor.