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Synergistic effect of VUV photons and F atoms on damage and etching of porous organosilicate films
Author(s) -
Lopaev Dmitry V.,
Zyryanov Sergey M.,
Zotovich Alexey I.,
Rakhimova Tatyana V.,
Mankelevich Yury A.,
Rakhimov Alexander T.,
Baklanov Mikhail R.
Publication year - 2018
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.201700213
Subject(s) - photon , etching (microfabrication) , drop (telecommunication) , atom (system on chip) , atomic physics , activation energy , materials science , photon energy , porosity , chemistry , photochemistry , nanotechnology , optics , physics , composite material , layer (electronics) , telecommunications , computer science , embedded system
Synergistic effect between VUV photons and F atoms in both damage and etching of porous organosilicate (OSG) low‐k films was studied. It was shown that both the OSG damage and etching rates by F atoms notably drop with decreasing temperature due to the existence of activation energy while the rate of the VUV‐induced damage practically does not change. The joint exposure can significantly exceed the sum of the separate effects of VUV photons and F atoms. The reason is that absorbed photons energy allows F atoms to overcome the activation barrier especially under lowered temperature. A possible mechanism of F atom surface reactions assisted by VUV photons is analyzed and discussed.