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Photoabsorption and damage of OSG low‐k films by VUV emission at 140–160 nm
Author(s) -
Lopaev Dmitry V.,
Rakhlinsky Vladislav V.,
Zyryanov Sergey M.,
Mankelevich Yury A.,
Rakhimova Tatyana V.,
Kurchikov Konstantin A.,
Baklanov Mikhail R.
Publication year - 2018
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.201700166
Subject(s) - absorption (acoustics) , materials science , dielectric , absorption edge , wavelength , low k dielectric , ultraviolet , analytical chemistry (journal) , atom (system on chip) , optoelectronics , chemistry , composite material , band gap , chromatography , computer science , embedded system
Vacuum Ultraviolet (VUV) absorption and damage of porous OSG low‐k dielectrics in the wavelength range 140–160 nm was measured. The measurements were done for two OSG films with different porosity. VUV absorption by OSG dielectrics very slowly decreases with increasing wavelength compared to SiO 2 which absorption sharply drops reaching the absorption edge. As the analysis has shown the absorption cross‐sections reduced to the Si atom density of these films are very close that indicates the same mechanisms of absorption and damage. The possible absorption and damage mechanisms are briefly discussed.