Premium
Concurrent effects of wafer temperature and oxygen fraction on cryogenic silicon etching with SF 6 /O 2 plasmas
Author(s) -
Tinck Stefan,
Tillocher Thomas,
Georgieva Violeta,
Dussart Rémi,
Neyts Erik,
Bogaerts Annemie
Publication year - 2017
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.201700018
Subject(s) - wafer , etching (microfabrication) , materials science , plasma etching , inductively coupled plasma , plasma , reactive ion etching , substrate (aquarium) , reflectometry , silicon , analytical chemistry (journal) , helium , optoelectronics , nanotechnology , chemistry , layer (electronics) , time domain , oceanography , physics , quantum mechanics , chromatography , geology , computer science , computer vision , organic chemistry
Cryogenic plasma etching is a promising technique for high‐control wafer development with limited plasma induced damage. Cryogenic wafer temperatures effectively reduce surface damage during etching, but the fundamental mechanism is not well understood. In this study, the influences of wafer temperature, gas mixture and substrate bias on the (cryogenic) etch rates of Si with SF 6 /O 2 inductively coupled plasmas are experimentally and computationally investigated. The etch rates are measured in situ with double‐point reflectometry and a hybrid computational Monte Carlo – fluid model is applied to calculate plasma properties. This work allows the reader to obtain a better insight in the effects of wafer temperature on the etch rate and to find operating conditions for successful anisotropic (cryo)etching.