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Grafting of N‐moieties onto octa‐methyl polyhedral oligomeric silsesquioxane microstructures by sequential continuous wave and pulsed plasma
Author(s) -
Chen Xiao,
Chen Zhiqiang,
Dumée Ludovic F.,
O'Dell Luke A.,
du Plessis Johan,
d'Agostino Riccardo,
Dai Xiujuan J.,
Magniez Kevin
Publication year - 2017
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.201600244
Subject(s) - silsesquioxane , surface modification , derivatization , selectivity , grafting , microstructure , hydrogen , polymer chemistry , x ray photoelectron spectroscopy , materials science , chemistry , nuclear chemistry , chemical engineering , organic chemistry , polymer , crystallography , high performance liquid chromatography , engineering , catalysis
A functionalization of microstructures of polyhedral oligomeric silsesquioxane (POSS) to obtain substrates contain N‐moieties, with a probable high selectivity of primary mines is demonstrated for the first time in a low pressure plasma process through a sequential continuous wave plus pulsed mode (CW + P). Selective grafting of N‐moieties was performed across octa‐methyl POSS micro‐powder by substituting hydrogen atoms of the terminal methyl groups during nitrogen/hydrogen (N 2 /H 2 ) gases plasma. As opposed to wet chemical functionalization approaches, the plasma method does not require reactive chemicals and is environmentally friendly. The results demonstrate the efficiency of the treatment (N/Si) reaches 7.1% with an indication of high NH 2 selectivity (NH 2 /N). The amount of primary amines is determined from XPS data after 4‐(trifluoromethyl) benzaldehyde (TFBA) chemical derivatization.