Premium
Etch Mechanism and Temperature Regimes of an Atmospheric Pressure Chlorine‐Based Plasma Jet Process
Author(s) -
Piechulla Peter,
Bauer Jens,
Boehm Georg,
Paetzelt Hendrik,
Arnold Thomas
Publication year - 2016
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.201600071
Subject(s) - atmospheric pressure plasma , x ray photoelectron spectroscopy , materials science , atmospheric pressure , jet (fluid) , plasma , chlorine , substrate (aquarium) , surface modification , layer (electronics) , oxide , silicon , silicon oxide , chemical engineering , analytical chemistry (journal) , chemistry , nanotechnology , metallurgy , thermodynamics , organic chemistry , meteorology , physics , quantum mechanics , oceanography , silicon nitride , engineering , geology
Reactive atmospheric plasma jets containing halogenous compounds are employed as locally acting tools for surface figure shaping or surface modification in ultra‐precision surface machining technologies. In the current study, the interaction between an atmospheric CCl 4 /O 2 containing plasma jet with silicon surface is investigated aiming at elucidating the chemical kinetics of surface reactions. Different process regimes are identified comprising material removal as well as polymeric and oxide layer formation, which depend on the ratio of the reactive components and substrate surface temperature. XPS and SEM measurements support the findings.