Premium
High‐Rate Deposition of Stoichiometric Compounds by Reactive Magnetron Sputtering at Oblique Angles
Author(s) -
Alvarez Rafael,
GarciaValenzuela Aurelio,
LopezSantos Carmen,
Ferrer Francisco J.,
Rico Victor,
Guillen Elena,
AlconCamas Mercedes,
EscobarGalindo Ramon,
GonzalezElipe Agustin R.,
Palmero Alberto
Publication year - 2016
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.201600019
Subject(s) - stoichiometry , materials science , amorphous solid , deposition (geology) , sputtering , sputter deposition , thin film , cavity magnetron , analytical chemistry (journal) , oblique case , metal , chemical engineering , optoelectronics , metallurgy , chemistry , nanotechnology , crystallography , chromatography , sediment , engineering , paleontology , linguistics , philosophy , biology
Target poisoning in reactive magnetron sputtering deposition of thin films is an undesired phenomenon, well known for causing a drastic fall of the process efficiency. We demonstrate that when this technique is operated at oblique angles, films with composition raging from pure metallic to stoichiometric compound can be grown in non‐poisoned conditions, thus avoiding most of the associated drawbacks. We have employed amorphous TiO x , although the presented results can be easily extrapolated to other materials and conditions. It is found that the proposed method improves 400% the growth rate of TiO 2 thin films.