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Microwave PECVD Silicon Carbonitride Thin Films: A FTIR and Ellipsoporosimetry Study
Author(s) -
Haacké Mathias,
Coustel Romain,
Rouessac Vincent,
Roualdès Stéphanie,
Julbe Anne
Publication year - 2016
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.201500058
Subject(s) - plasma enhanced chemical vapor deposition , materials science , fourier transform infrared spectroscopy , thin film , ellipsometry , amorphous solid , analytical chemistry (journal) , microstructure , chemical engineering , silicon , oxide , silicon oxide , composite material , nanotechnology , chemistry , optoelectronics , organic chemistry , silicon nitride , metallurgy , engineering
Amorphous non‐oxide a‐SiC x N y :H thin films have been synthesized at 300 or 500 K from an Ar/HMDSN/NH 3 gas mixture in a lab‐scale microwaves PECVD reactor. These thin films have been characterized by FTIR spectroscopy and spectroscopic ellipsometry coupled with gas adsorption, in order to evidence the influence of PECVD synthesis conditions on the materials composition and microstructure. Deposition at high temperature (500 K) was found to yield more inorganic and more compact films in comparison with those obtained at room temperature. In addition, when considering long term aging at room temperature for more than 1 month, the films synthesized at high temperature were found to be more stable toward oxidation in (humid) air.