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Low‐Pressure Plasma After‐Treatment of Pollutants Emitted During Semiconductor Manufacturing
Author(s) -
Hur Min,
Lee Jae Ok,
Kang Woo Seok,
Song YoungHoon
Publication year - 2015
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.201500046
Subject(s) - plasma , pollutant , semiconductor device fabrication , semiconductor , fourier transform infrared spectroscopy , materials science , analytical chemistry (journal) , fourier transform , spectroscopy , infrared , environmental chemistry , chemistry , chemical engineering , optoelectronics , organic chemistry , optics , engineering , physics , quantum mechanics , wafer
Feasibility tests of abating and stabilizing pollutants emitted during semiconductor manufacturing are performed by using a plasma reactor placed before a vacuum pump. Abatement characteristics of N 2 O, CF 4 , CHF 3 , NF 3 , C 3 H 6 , and TEMAZ are investigated by analyzing the data obtained by using Fourier transform infrared spectroscopy and gas chromatography. The size of byproduct particles is identified by using a particle sampler. Analysis is focused on the role of reactant gases (O 2 or H 2 O) during abatement. Finally, the applicability of low‐pressure plasma after‐treatment technology is discussed from the environmental and economic points of view.