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Back Cover: Plasma Process. Polym. 1∕2014
Author(s) -
Tsai ChihHung,
Li YunShiuan,
Cheng IChun,
Chen JianZhang
Publication year - 2014
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.201470004
Subject(s) - materials science , cover (algebra) , plasma , dielectric , thin film transistor , process (computing) , transistor , layer (electronics) , optoelectronics , chemical engineering , nanotechnology , composite material , polymer chemistry , electrical engineering , computer science , mechanical engineering , engineering , physics , operating system , quantum mechanics , voltage
Back Cover: O 2 /HMDSO‐plasma‐deposited films are used as the gate dielectrics of MgZnO TFTs. The inorganic/organic component ratio can be tailored by processing parameters. While the inorganic content enhances the insulating property, the organic content improves the switching performance of the transistors. Further details can be found in the article by I‐Chun Cheng, Jian‐Zhang Chen et. al. on page 89 .