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Molecular Dynamics Calculations of CH 3 Sticking Coefficient onto Diamond Surfaces
Author(s) -
Schwaederlé Laurent,
Brault Pascal,
Rond Cathy,
Gicquel Alix
Publication year - 2015
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.201400223
Subject(s) - sticking coefficient , diamond , molecular dynamics , substrate (aquarium) , materials science , crystal (programming language) , deposition (geology) , analytical chemistry (journal) , chemistry , computational chemistry , composite material , organic chemistry , paleontology , oceanography , adsorption , desorption , sediment , computer science , biology , programming language , geology
A molecular dynamics model is implemented in a way dedicated to simulate initial conditions close to microwave plasma deposition of thick single crystal diamond films. The sticking coefficient of CH 3 radical is obtained for (111) and (100) surface at three gas and substrate temperatures: 1 120, 1 200, and 1 500 K. A low value of 5.10 −4 is obtained, which is consistent with experimental findings claiming values less than 0.01 or equating to 8.10 −3 at 1 120 K.
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