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Synthesis of Few‐Layer Graphene‐on‐Insulator Films by Controllable C 4 F 8 Plasma Etching SiC
Author(s) -
Jin Chenggang,
Huang Tianyuan,
Yang Yan,
Wu Mingzhi,
Xu Yijun,
Wu Zhaofeng,
Zhuge Lanjian,
Wu Xuemei,
Ye Chao
Publication year - 2015
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.201400181
Subject(s) - materials science , raman spectroscopy , graphene , plasma , insulator (electricity) , plasma etching , etching (microfabrication) , inductively coupled plasma , analytical chemistry (journal) , x ray photoelectron spectroscopy , thin film , optoelectronics , layer (electronics) , nanotechnology , chemical engineering , chemistry , optics , physics , engineering , quantum mechanics , chromatography
C 4 F 8 ‐based, inductively coupled plasma (ICP) combined with dual‐frequency capacitively coupled plasma (CCP) was used to etch 6H–SiC substrates for the synthesis of few‐layer graphene‐on‐insulator (FLGOI) films. The Raman spectroscopy studies were used to measure the thickness of the FLG samples. The combination of high frequency CCP and ICP modes can facilitate the tuning of the C 4 F 8 discharge dissociation characteristics. A balance is struck between etching and deposition, leaving an ultra‐thin C‐rich overlaying film on the surface. After the layer is annealed at low temperature (920 °C), F atoms can be expelled leading to the reconstruction of the remainder material to form an FLG film. Considering the easy control of C 4 F 8 plasma, our work opens up a new avenue for achieving FLGOI films with high yield at low temperature.