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The Influence of H 2 Plasma Treatment on LWR Mitigation: The Importance of EUV Photoresist Composition
Author(s) -
De Schepper Peter,
el Otell Ziad,
Vaglio Pret Alessandro,
AltamiranoSanchez Efrain,
De Gendt Stefan
Publication year - 2015
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.201400157
Subject(s) - extreme ultraviolet lithography , photoresist , resist , lithography , materials science , plasma , critical dimension , multiple patterning , line width , photolithography , optoelectronics , nanotechnology , optics , physics , layer (electronics) , quantum mechanics
To meet the demands for sub‐20 nm feature devices in the semiconductor industry, minimizing the line width roughness (LWR) is a critical concern for ultra‐large scale integrated circuit manufacturing. Post‐lithography treatments should reduce the LWR by at least 50% to meet the technology requirements, but the available post‐lithography strategies come short. To support the delayed progress, an in depth understanding of the interaction of such post‐lithography treatments with EUV‐specific resist functionalities is required. In this article, we analyze the change in line widths and LWR's for 30–35 nm lines using EUV photoresists. In addition we study the effect of the chemical composition on the reduction of LWR after hydrogen plasma treatment using “artificially” prepared reference resists. We highlight the effect of the fluorine unit, ester functionalities and photo acid generator/quencher loading on the LWR improvement and H 2 plasma induced reflow.