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Etching and Post‐Treatment Surface Stability of Track‐Etched Polycarbonate Membranes by Plasma Processing Using Various Related Oxidizing Plasma Systems
Author(s) -
Tompkins Brendan D.,
Dennison Jordan M.,
Fisher Ellen R.
Publication year - 2014
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.201400044
Subject(s) - formic acid , polycarbonate , x ray photoelectron spectroscopy , contact angle , oxidizing agent , etching (microfabrication) , analytical chemistry (journal) , membrane , plasma , materials science , scanning electron microscope , oxide , radical , chemistry , chemical engineering , nanotechnology , chromatography , layer (electronics) , composite material , organic chemistry , biochemistry , physics , quantum mechanics , engineering
Oxidizing plasmas (O 2 , CO 2 , H 2 O (g), and formic acid (g)) were used to modify track‐etched polycarbonate (PC) membranes and explore the mechanisms and species responsible for etching. Etch rates were measured using scanning electron microscopy; modified surfaces were characterized with X‐ray photoelectron spectroscopy and water contact angle. These results were combined with optical emission spectroscopy to provide insight into etch mechanisms. Although oxide functionalities implanted were similar, H 2 O (g) and formic acid vapor plasmas yielded the lowest contact angles. The CO 2 , H 2 O (g), and formic acid (g) plasma‐modified surfaces were found to be similarly stable 1 month after treatment. Etch rate correlated directly to the relative gas‐phase density of atomic oxygen and hydroxyl radicals.