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Parallel 2D Axisymmetric Fluid Modeling of CF 4 Discharge in an Inductively Coupled Plasma Source During SiO 2 Etching
Author(s) -
Chiu YuanMing,
Chiang ChungHua,
Hung ChiehTsan,
Hu MengHua,
Wu JongShinn,
Hwang FengNan
Publication year - 2014
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.201300134
Subject(s) - inductively coupled plasma , etching (microfabrication) , plasma , substrate (aquarium) , chemistry , analytical chemistry (journal) , plasma etching , rotational symmetry , mechanics , chromatography , layer (electronics) , geology , physics , oceanography , organic chemistry , quantum mechanics
A parallel 2D axisymmetric plasma fluid modeling for an inductively coupled plasma source with tetrafluoromethane precursor is reported. In total, 32 species with 96 gas‐phase and 27 surface reactions with site‐balance equations are considered. The predicted results of major species densities are in reasonable agreement with reported experiments. The etching products, e.g. SiF x and O 2 , are found to be appreciable (∼10%) compared to the precursor near the substrate. The predicted density trends, such as CF x + and CF x ( x = 1–3), are also consistent with reported experiments. Finally, the predicted etching rate on the SiO 2 substrate is presented and discussed in detail.