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O 2 /HMDSO‐Plasma‐Deposited Organic–Inorganic Hybrid Film for Gate Dielectric of MgZnO Thin‐Film Transistor
Author(s) -
Tsai ChihHung,
Li YunShiuan,
Cheng IChun,
Chen JianZhang
Publication year - 2014
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.201300107
Subject(s) - materials science , gate dielectric , thin film transistor , dielectric , optoelectronics , threshold voltage , thin film , fourier transform infrared spectroscopy , gate oxide , analytical chemistry (journal) , transistor , electrical engineering , nanotechnology , voltage , layer (electronics) , chemical engineering , chemistry , engineering , chromatography
An organic–inorganic hybrid film is deposited from O 2 /HMDSO plasma. The SiOSi/SiCH 3 FTIR absorption ratio of this film increases with the process power and O 2 /HMDSO precursor flow ratio, resulting in a more inorganic‐like film. This hybrid film is used as the gate dielectric of MgZnO TFTs. As the SiOSi/SiCH 3 FTIR absorption ratio of the gate dielectric increases, the gate leakage current decreases, on/off current ratio increases, threshold voltage increases, and subthreshold swing increases. High SiCH 3 bonding content in the gate dielectric improves TFT switching but deteriorates gate insulation, resulting in increased gate leakage current and decreased on/off current ratio.