O 2 /HMDSO‐Plasma‐Deposited Organic–Inorganic Hybrid Film for Gate Dielectric of MgZnO Thin‐Film Transistor

An organic–inorganic hybrid film is deposited from O 2 /HMDSO plasma. The SiOSi/SiCH 3 FTIR absorption ratio of this film increases with the process power and O 2 /HMDSO precursor flow ratio, resulting in a more inorganic‐like film. This hybrid film is used as the gate dielectric of MgZnO TFTs. As the SiOSi/SiCH 3 FTIR absorption ratio of the gate dielectric increases, the gate leakage current decreases, on/off current ratio increases, threshold voltage increases, and subthreshold swing increases. High SiCH 3 bonding content in the gate dielectric improves TFT switching but deteriorates gate insulation, resulting in increased gate leakage current and decreased on/off current ratio.