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Formation of a Nanoscale Si O 2 Capping Layer on Photoresist Lines with an Ar/SiCl 4 /O 2 Inductively Coupled Plasma: A Modeling Investigation
Author(s) -
Tinck Stefan,
AltamiranoSánchez Efrain,
De Schepper Peter,
Bogaerts Annemie
Publication year - 2014
Publication title -
plasma processes and polymers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.644
H-Index - 74
eISSN - 1612-8869
pISSN - 1612-8850
DOI - 10.1002/ppap.201300062
Subject(s) - photoresist , layer (electronics) , materials science , deposition (geology) , plasma , analytical chemistry (journal) , inductively coupled plasma , isotropy , plasma enhanced chemical vapor deposition , dilution , substrate (aquarium) , optoelectronics , nanotechnology , chemistry , chemical vapor deposition , optics , paleontology , physics , thermodynamics , oceanography , quantum mechanics , chromatography , sediment , geology , biology
PECVD of a nanoscale SiO 2 capping layer using low pressure SiCl 4 /O 2 /Ar plasmas is numerically investigated. The purpose of this capping layer is to restore photoresist profiles with improved line edge roughness. A 2D plasma and Monte Carlo feature profile model are applied for this purpose. The deposited films are calculated for various operating conditions to obtain a layer with desired shape. An increase in pressure results in more isotropic deposition with a higher deposition rate, while a higher power creates a more anisotropic process. Dilution of the gas mixture with Ar does not result in an identical capping layer shape with a thickness linearly correlated to the dilution. Finally, a substrate bias seems to allow proper control of the vertical deposition rate versus sidewall deposition as desired.